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This work covered the application of thermally reduced graphene oxide (rGO) as a hole‐transport layer (HTL) to enhance stability of normal P3HT:PCBM‐based bulk‐heterojunction solar device. This device showed approximately the same performance of device using PEDOT:PSS as HTL (3.14%). After 3 days, exposure of an unsealed device in 1 sun illumination, rGO device resulted in 67% degradation of performance,...
Bipolar FETs (BiFETs) based on the bulk heterojunction system comprised of various ratios of P3HT and soluble fullerene derivatives are demonstrated. We studied the effect of addition of small concentrations of the processing additive, 1,8-octanedithiol (ODT), on gate-induced transport properties. The control blend system consisting of poly (3-hexylthiophene) (P3HT) and phenyl-C61-butyric acid methyl...
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