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Temperature-dependent ON-state breakdown (BVON) loci of AlGaN/GaN high-electron-mobility transistors (HEMTs) were experimentally demonstrated for the first time. With gate-current extraction technique, impact ionization was revealed to be responsible for the ON-state breakdown in our device as the HEMTs is marginally turned on. The characteristic electric-field Ei of impact ionization was extracted...
This paper reports a novel Super Junction pLDMOS (SJ-pLDMOS) with charge-balanced SJ region at the surface of Variation Lateral Doping (VLD) drift region. SJ region provides a low on-resistance path in the ON-state and keeps charge balance approximately when the doping concentration of p pillars is slightly higher than that of the n pillars during the OFF-state. A significant reduction of the specific...
Multi-recessed gate 4H-SiC MESFETs with a gate periphery of 5-mm are fabricated and characterized. The multi-recessed region under the gate terminal are applied to improve the gate-drain breakdown voltage and to alleviate the trapping induced instabilities by moving the current path away from the surface of the device. The experimental results demonstrate that microwave output power density, power...
A new super junction LDMOS (SJ-LDMOS) on partial silicon-on-insulator (SOI) with composite substrate is presented in this paper. The thin super junction structure on the buried oxide (BOX) provides the surface low on-resistance path, which is attributed to the heavy doping trait of SJ. The N-buffer layer is introduced under the BOX to sustain vertical voltage, which reduces the substrate-assisted...
An improved 3D tri-gate 4H-SiC MESFETs structure with recessed drift region was proposed. The recessed drift region of the proposed structure is to reduce the channel thickness between gate and drain to increase breakdown voltage as well as to eliminate gate depletion layer extension to source/drain to decrease gate-source capacitance. The DC and RF electrical characteristics of the proposed structure...
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