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Recently, we have verified an inter-valley scattering free avalanche photodiode (APD) by using GaN/AlN periodically stacked structure (PSS). High linear-mode gain and extremely low excess noise have been achieved in a prototype GaN (10 nm)/ AlN (10 nm) PSS APD. In this letter, device optimization is investigated theoretically. Gains and excess noises are simulated in PSS APDs with different periodical...
This paper introduces the use of artificial neural networks (ANNs) as a method to guide the design of high-performance MEMS resonators and applies it to the prediction of spurious modes (SMs) in the proximity of the series resonance of aluminum nitride (AlN) contour-mode MEMS resonators (CMRs). ANN enables both fast and accurate prediction of spurious modes, hence facilitating the MEMS designer in...
The influence of superlattice periods and well doping on the band structure and distribution of electrons for III-nitride intersubband photodetectors are theoretically studied. It is found that there are more wells populated with electrons with the increase of superlattice periods and doping concentration. This knowledge is beneficial to improve the intersubband absorption efficiency, providing theoretical...
Inter-digital transducers and photonic crystal cavities are integrated on a piezoelectric aluminum nitride film sputtered on an oxidized silicon wafer, which leads to the first demonstration of microwave frequency traveling surface acoustic wave induced transparency.
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