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In this contribution an integrated HPA-DPDT for next generation AESA TRMs is presented. The proposed circuit relies on a concurrent design technique merging switches and HPA matching network. Realized MMIC features a 3×5mm2 outline operating in the 6–18 GHz band with a typical output power of 2W, an associated PAE of 13% and 3dB insertion loss in RX mode.
A review of the fundamentals of distributed amplification is presented along with the design and performance of a novel dual‐band/diplexer monolithic distributed amplifier based on the combination of CRLH and RH transmission lines. The MMIC prototype, operating in the C‐band and featuring a 10 dB gain with less than −20 dB crosstalk levels, represents the first monolithic implementation in GaN technology...
A monolithic realization of a Variable Load is presented for use in source-pull, noise characterization test-benches. Such Variable Load, inserted at the DUT input section, represents a valid alternative to electromechanical tuners, especially in terms of cost, repeatability and ease of integration. Measurements are reported which testify the good performance obtained with respect to maximum VSWR...
In this contribution an analytical approach to the design of constant-isolation microwave resistive-inductive compensated switch operating from DC to 30GHz is presented. Simulated and measured performance of a GaN HEMT single-FET switch cell topology and that of a complete SPDT using the proposed methodology are presented to demonstrate the approach feasibility and effectiveness. The single-FET switch...
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