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This paper investigates the read operation of poly-Si nanowire silicon–oxide–nitride–oxide–silicon devices with independent double-gate (IDG) configuration. The device features oxide–nitride–oxide (ONO) stack as the charge storage medium in one of the two gated sides with pure oxide in the other. Owing to the IDG feature, the shift in the device's transfer characteristics due to a change in the amount...
Charge-trapping SONOS devices featuring nanowire (NW) and independent double-gated (IDG) structure are fabricated and characterized. The mechanism leading to DG output current performance enhancement is investigated. Taking advantage of the separated-gated property, the back-gate bias effect is used to probe its impacts on programming efficiency. It is also discovered that reduced NW thickness leads...
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