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In applications ranging from noncontact microsurgery to semiconductor blind hole drilling, precise depth control of laser processing is a major challenge. Even expensive a priori characterization cannot compensate for material heterogeneity and stochasticity inherent to the ablation process. Here we use in situ depth imaging to guide the machining process in real time. W e image along the machining...
Silicon rich oxide has shown photoemission. However, normally it is required a high temperature annealing in order to get intense emission. On the other hand, Si nanocrystals, nC, obtained by electrochemical methods and poured in a solutions have shown photoemission that depends on their size. Then, Si nC obtained by electrochemical methods are an alternative to obtain emissive silicon rich oxide...
The size of Si nanocrystals in silicon rich oxide has been varied by depositing this material in multilayer arrays. They are possible candidates for one dimensional quantum devices. A study based on TEM, Raman and XRD measurements is presented.
Photoluminescence and Cathodoluminescence of hydrogenated Silicon Rich Oxide (SRO:H) films were studied. The samples were prepared by Low Pressure Chemical Vapor Deposition (LPCVD) on Si substrates, some samples were thermally annealed at high temperature and hydrogenation was made by low temperature annealing in forming gas. Strong red PL (Photoluminescence) and CL (Cathodoluminescence) in almost...
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