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ReRAM (Resistive Random Access Memory) is an emerging non-volatile memory technology that exhibits high cell density and low standby power. ReRAM crossbars, while having the smallest 4F2 cell size, suffer from large sneak leakage, which not only wastes dynamic energy but also degrades system performance significantly. In this paper, we propose V-ReRAM, a novel ReRAM crossbar design based on 1TnR cell...
MLC STT-MRAM (Multi-level Cell Spin-Transfer Torque Magnetic RAM), an emerging non-volatile memory technology, has become a promising candidate to construct L2 caches for high-end embedded processors. However, the long write latency limits the effectiveness of MLC STT-MRAM based L2 caches. In this paper, we address this limitation with two novel designs: Line Pairing (LP) and Line Swapping (LS). LP...
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