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Simultaneous optimization of detectivity and dark current is successfully achieved by modulating the Schottky barrier height of a graphene/p‐type silicon photodetector from 0.42 to 0.68 eV by doping graphene with polyethyleneimine (PEI). At a barrier height modulation of 0.26 eV, the dark current is reduced by three orders of magnitude from 980 nA to 219 pA, and the detectivity is improved by 529%...
Despite significant progress in color discrimination in various optoelectronic systems, most conventional technologies equipped with dissipative optical filters still suffer from high incident light loss and costly manufacturing. Herein, it is demonstrated that a novel class of organic–inorganic hybrid perovskite photodetectors based on a p‐i‐n‐i‐p structure can exhibit a switchable spectral response...
Various photodetectors showing extremely high photoresponsivity have been frequently reported, but many of these photodetectors could not avoid the simultaneous amplification of dark current. A gate‐controlled graphene–silicon Schottky junction photodetector that exhibits a high on/off photoswitching ratio (≈104), a very high photoresponsivity (≈70 A W−1), and a low dark current in the order of µA...
A graphitic capping layer was successfully formed on top of Cu interconnects at room temperature, using a pulsed KrF laser. The change in temperature of the Cu line was maintained below 380 °C during laser irradiation with a fluence of 312.5 mJ/cm2. The resistance and critical current density of graphitic layer-capped Cu interconnects were improved by 2.8% and 5.2%, respectively. The lifetime of graphitic...
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