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We established a kinetic model (the UT2017 model) for chemical vapor deposition of silicon carbide (SiC) from methyltrichlorosilane (CH3SiCl3, MTS)/H2, and quantitatively identified CH2SiCl3 as one of the SiC film‐forming species. In a previous study, we established a kinetic model (the UT2014 model), which reproduced the overall decomposition of MTS, but had not validated it in terms of radicals...