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Deep ultraviolet (DUV) avalanche photodiodes (APD) sensitive at wavelengths shorter than 260 nm have numerous applications, including chemical and biological identification and water quality monitoring. Wide bandgap materials such as silicon carbide (SiC) and the III-nitrides (AlInGaN) are well suited for UV detector applications. SiC devices have high avalanche gain, low dark current and low excess...
In this paper, we study the photoluminescence (PL) lifetimes in AlGaN alloys with incommensurate chemical ordering. AlGaN films were grown by RF plasma-assisted MBE under different kinetic conditions. The compositions in all films were maintained at a constant value of 72 % AlN mole fraction by using the same Al flux, while the kinetics of growth were controlled by varying the Ga flux and thus the...
The negative polarization charge at the n-InGaN/p-GaN interface of single heterojunction LEDs with p-side down are investigated for various In-compositions. We demonstrate peak emission wavelength blue-shift and intensity dependence on In-composition with increasing current density.
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