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We report record breaking values for PMOS source drain (S/D) contact resistivity, ρc < 10−9Ω·cm2. These were obtained by shallow Ga ion implantation on Si0.4Ge0.6 in combination with subsequent pulsed nanosecond laser anneal (NLA). Cross section transmission electron microscopy (XTEM) shows the pc reduction mechanism is based on Ga and Ge segregation towards the surface.
A 60 GHz voltage-controlled oscillator (VCO) with a double cross-coupled negative-resistance cell is presented. The proposed double cross-coupled pair shows higher ftrans and lower input capacitance than a typical capacitive-degeneration cross-coupled pair at millimetre-wave band. The 60 GHz double cross-coupled VCO has phase noise of -84 dBc/Hz at 100 kHz offset from 59.2 GHz and good FOM of -188...
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