The Infona portal uses cookies, i.e. strings of text saved by a browser on the user's device. The portal can access those files and use them to remember the user's data, such as their chosen settings (screen view, interface language, etc.), or their login data. By using the Infona portal the user accepts automatic saving and using this information for portal operation purposes. More information on the subject can be found in the Privacy Policy and Terms of Service. By closing this window the user confirms that they have read the information on cookie usage, and they accept the privacy policy and the way cookies are used by the portal. You can change the cookie settings in your browser.
We report record breaking values for PMOS source drain (S/D) contact resistivity, ρc < 10−9Ω·cm2. These were obtained by shallow Ga ion implantation on Si0.4Ge0.6 in combination with subsequent pulsed nanosecond laser anneal (NLA). Cross section transmission electron microscopy (XTEM) shows the pc reduction mechanism is based on Ga and Ge segregation towards the surface.
A study on the dry thermal oxidation of a graded SiGe layer was performed. To reduce the Ge pileup effect during the thermal oxidation, the SiGe layer was deposited with much lower Ge content near the free surface than near the SiGe/Si heterointerface. After dry thermal oxidation at 900°C, the Ge composition in the pileup layer was significantly reduced and strain relaxation by defect formation was...
Set the date range to filter the displayed results. You can set a starting date, ending date or both. You can enter the dates manually or choose them from the calendar.