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A voltage doubler rectifier for hostile environments, in particular at high temperatures, is presented. The system consists of a clamper section and a single diode rectifier working at higher temperatures with respect to the conventional operating thermal domain of silicon electronics. Both sections are realized with integrated 4H-SiC Schottky diodes. The rectified output amplitude signal voltage...
The optimization of the temporary wafer bonding process for thin wafers handling is reported. Two temporary bonding materials are evaluated with two low temperature cure (200degC) dielectrics. TGA results show that the dielectric materials are more stable at high temperature (260degC) with not more than 1% weight loss while the temporary bonding adhesives gave a higher weigh loss of 5.5%. It is found...
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