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Metal gate/high-k LSTP CMOSFETs for sub-32nm technology was demonstrated using a novel-damage free neutral beam-assisted atomic etching process. Due to its neutralized atomic flux and chemical reaction, it had a high etch selectivity, oxygen concentration control and improved device performance/reliability. NBALE is a key process for reducing GIDL and Ioff control which is a key factor for LSTP.
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