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In this paper, we present a 1T1R (one-transistor-one-resistor) structure RRAM (resistive switching random access memory) fully integrated with existing CMOS process. The RRAM cell is fabricated between two metal layers (metal A and metal B), and consists of plug contact type bottom electrode (plug-BE), resistive layer and top electrode (TE). As the RRAM cell is an island pattern, there are some issues...
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