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We propose a method to improve Al thin film in the chemical vapor deposition (CVD) using superior Al precursor, Aluminum borohydride trimethylamine (AlBT). The deposition conditions of AlBT, which can improve factors such as sheet resistance (Rs) and reflective index (R.I.) that are related with the morphology of the CVD-Al film are optimized. The CVD-Al film by this AlBT improves via profiles and...
We investigated the effect of in-situ cleaning with ECR (Electron Cyclotron Resonance) hydrogen plasma. This cleaning was effective in removing oxygen and carbon on the wafer surface because of its high density and low substrate damage and, thus, high quality epitaxial films were deposited. The contents of the oxygen or carbon species were correlated with the structural quality of the interface and...
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