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A thermally evaporated silicon monoxide (SiO) film has been experimented as the gate dielectric in graphene field-effect transistors (GFETs) due to its room-temperature and low-damage deposition without introducing chemical gases or ionized particles as in other film deposition techniques, which may cause damage to graphene. In order to evaluate the dielectric properties, a double-gated GFET was fabricated...
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