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This work demonstrates a new type of SONOS memory in which there are no junctions. These junction-less (JL) devices are realized on vertical Si nanowire gate all-around structure with channel dimension down to 20nm and have comparable electrical characteristics (SS <; 70mV/dec, leakage current <;1×10-12 A and a memory window of 3.2V with 1ms P/E) with the junction based wire SONOS. Being free...
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