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We proposed and fabricated an AlGaN/GaN hetero-structure layer-based metal-insulator-semiconductor-insulator-metal type UV sensor by using five stacks of multi-layer graphene. It showed two clear cut-off wavelengths at 330 and 365 nm. Compared with that of Ni electrode, it showed very low leakage current and high photo-responsivity
We fabricated normally-off mode n-channel schottky barrier metal oxide semiconductor field effect transistor (SB-MOSFET) with ITO schottky barrier source/drain (S/D) on a highly resistive GaN layer grown on silicon substrate with low temperature AlN and high temperature GaN buffer layers. Fabricated SB-MOSFET exhibited a threshold voltage of 4.2 V, and a maximum transconductance of 2.9 mS/mm at VDS...
A lateral double diffused metal-oxide-semiconductor transistor (LDMOST) with double work function gate (DWG) structure was fabricated by utilizing silicidation of poly-Si layer. The n+ poly-Si gate in the source side was step-etched and the whole surface of the poly-Si gate was covered with Ni film, followed by self-aligned silicide (salicide) process. The step-etched poly-Si layer in the source side...
In this letter, we propose a new lateral double-diffused metal-oxide-semiconductor field-effect transistor (LDMOSFET) with dual-work-function-gate (DWG) structure fabricated by utilizing silicidation of poly-Si layer. The step-etched poly-Si layer in the source side of the gate was totally converted to Ni-rich silicide, which resulted in a higher work function. On the other hand, in the drain side,...
We present for the first time a detailed study on the effect of various pre-cleaning methods on the formation of the low resistance Ni-silicide from the nickel film deposited by ALD system. Four types of samples were prepared on 6 inch p-type Si (100) wafers.
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