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In this work, we present a simple current mirror based on two single nanowire strained silicon Schottky barrier (SB) MOSFETs with gate-all-around (GAA) structure. B+ implantation into NiSi2 with dopant segregation at source and drain was used to decrease the Schottky barrier height for holes at the metal/channel junctions. The current mirror shows a very good Mirror Ratio MR = 0.99 and high output...
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