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This work presents a novel Si-on-SiC laterally-diffused (LD) MOSFET structure intended to provide high breakdown voltage of 600 V and be resistant for harsh-environment space applications. Single-event effects (SEE) and total ionizing dose (TID) are investigated for the first time in such device. Initially, the considered Si LDMOS structure on SiC suffers from single-event burnout (SEB) at a drain...
This paper analyses the effect of employing an Si on semi-insulating SiC (Si/SiC) device architecture for the implementation of 600-V LDMOSFETs using junction isolation and dielectric isolation reduced surface electric field technologies for high-temperature operations up to 300 °C. Simulations are carried out for two Si/SiC transistors designed with either PN or silicon-on-insulator (SOI) and their...
Two commercial 1.2 kV SiC MOSFETs have been extensively characterised from 30 to 320 K. The temperature dependence of their I/V characteristics, threshold voltage, and breakdown voltage has been examined and are presented in this paper. Overall, the measured characteristics of both devices demonstrate very similar temperature dependencies and it is shown that below ∼100 K any further decrease in temperature...
A new generation of power electronic semiconductor devices are being developed for the benefit of space and terrestrial harsh-environment applications. 200–600 V lateral transistors and diodes are being fabricated in a thin layer of silicon (Si) wafer bonded to semi-insulating 4H silicon carbide (SiC) leading to a Si/SiC substrate solution that promises to combine the benefits of silicon-on-insulator...
The 4H-SiC Schottky diode with 2-step mesa junction termination extension (JTE) structure has been investigated and optimized using SILVACO device simulator. Comparisons between different JTE structures of breakdown voltage and electric field crowding for Schottky diodes have been made. Simulation results show that the Space Modulated two-zone JTE has the highest breakdown voltage which is about 97%...
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