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Two commercial 1.2 kV SiC MOSFETs have been extensively characterised from 30 to 320 K. The temperature dependence of their I/V characteristics, threshold voltage, and breakdown voltage has been examined and are presented in this paper. Overall, the measured characteristics of both devices demonstrate very similar temperature dependencies and it is shown that below ∼100 K any further decrease in temperature...
We report a novel 1000 degC stable HfLaON p-MOSFET with Ir3 Si gate. Low leakage current of 1.8times10-5 A/cm2 at 1 V above flat-band voltage, good effective work function of 5.08 eV, and high mobility of 84 cm2/Vmiddots are simultaneously obtained at 1.6 nm equivalent oxide thickness. This gate-first p-MOSFET process with self-aligned ion implant and 1000 degC rapid thermal annealing is fully compatible...
Highly reliable characterization of fast transient in NBTI is achieved by performing initial and stressed I-V measurements in ultra-short time (100 ns). We further provide evidences that reaction-diffusion (R-D) model can not explain the fast transient in NBTI, while hole trapping (HT) model explains all experimental observations. We also establish that previous on-the-fly methods are sound except...
Schottky source-drain (S/D) MOS transistor coupled with metal gate is a promising alternative to the conventional poly-Si gate and doped S/D MOSFET technology. This paper explores through simulations the effect of metal S/D WF and the gradual change of barrier profile at the metal-semiconductor interface and in the few nanometers space around it on the n/p channel device performance. We present the...
Fast component of Vth instability in MOSFET with HfO 2 gate dielectric is systematically measured and characterized. A charge trapping/de-trapping model is used to simulate the Vth instability with overall agreement with the experiments. Experimental and modeling data provide and predict the fast Vth shift under both static and dynamic stress conditions. These data are incorporated into HSpice circuit...
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