The Infona portal uses cookies, i.e. strings of text saved by a browser on the user's device. The portal can access those files and use them to remember the user's data, such as their chosen settings (screen view, interface language, etc.), or their login data. By using the Infona portal the user accepts automatic saving and using this information for portal operation purposes. More information on the subject can be found in the Privacy Policy and Terms of Service. By closing this window the user confirms that they have read the information on cookie usage, and they accept the privacy policy and the way cookies are used by the portal. You can change the cookie settings in your browser.
This paper reports on the layout optimization of Pt-AlGaN/GaN HEMT-sensors for enhancing hydrogen sensor performance. Sensors with gate width and length ratios Wg/Lg from 0.25 to 10 were designed, fabricated and tested for the detection of hydrogen gas at 200 °C. Sensitivity, sensing current variation and transient response are directly related to the sensor gate electrode Wg/Lg ratio. The obtained...
In this work, we propose Residual Attention Network, a convolutional neural network using attention mechanism which can incorporate with state-of-art feed forward network architecture in an end-to-end training fashion. Our Residual Attention Network is built by stacking Attention Modules which generate attention-aware features. The attention-aware features from different modules change adaptively...
In this paper, we studied effects of doping concentration on the semi-floating gate (SFG) image sensor by Sentaurus technology computer aided design (TCAD) simulation. Our results show that the doping concentration of about 6e16 cm−3 for both n-well and p-well is appropriate for the SFG sensor. The doping concentration plays an important role on the output current range and the sensitivity of the...
A novel Dynamic Carrier-Storage IGBT (DCS-IGBT) is proposed. With Gate (hereinafter, G) and Control Gate (hereinafter, CG), two independent gates integrated in one trench area, CG can be applied with different bias to modulate the carrier-storage layer dynamically. When the device is on, positive bias on CG can raise the concentration of the carrier storage layer leading an increase of the current...
Super-junction (SJ) devices have the advantages of low Drain-Source on-state Resistance (Rdson) and high switching speed. Although it is a Si-based device, it breaks through the classical law of Si power devices. This kind of non-classical MOSFET structure even realizes high performance comparable to III–V devices. However, Electromagnetic Interference (EMI) problem becomes an issue when the SJ devices...
In order to obtain better high frequency performance for GaN-based devices, we investigate the influence of the gate length Lg, the gate-source space Lgs, the gate-drain space Lgd, and the thickness of barrier AlGaN on frequency performance of AlGaN/GaN high electron mobility transistors (HEMTs) using silvaco TCAD simulation. Besides, the importance of Ohmic contact resistance Rc to current-gain cutoff...
In this paper, a U-shape fin field-effect transistor (U-FinFET) is proposed for sub-10nm technology and low power applications. Compared with the conventional tri-gate fin field-effect transistor (FinFET), this structure has the advantages of relatively low off-state channel leakage current (Ioff) and sub-threshold swing (SS). By using Sentaurus TCAD simulations, it is found that the U-shape channel...
A serial-input serial-output encoder based on pipelined rotate-left-accumulator (RLA) circuits is designed for multi-rate Quasi-Cyclic Low-Density Parity-Check (QC-LDPC) codes of Chinese digital terrestrial/television multimedia broadcasting (DTMB) standard. The RLA circuit can make the area usage economical, and the pipelined architecture can simplify the memory structure. The encoder is implemented...
This paper presents the development of a distribution network solid state transformer (SST) based on high voltage (13kV) SiC MOSFET and JBS diode. This distribution SST is composed with a medium voltage ac/dc rectifier, medium voltage medium frequency dc/dc converter and a low voltage inverter. It's able to be interfaced to 3.6kV distribution grid and output both a 400V dc and 240/120V ac. This paper...
This paper presents the development of a distribution network solid state transformer (SST) based on high voltage (13kV) SiC MOSFET and JBS diode. This distribution SST is composed with a medium voltage ac/dc rectifier, medium voltage medium frequency dc/dc converter and a low voltage inverter. It's able to be interfaced to 3.6kV distribution grid and output both a 400V dc and 240/120V ac. This paper...
Solid state transformer (SST) has been regarded as one of the most emerging technologies for traction system and smart grid application. This paper presents the system design and performance demonstration of a high voltage SST lab prototype, which works as the active grid interface in the smart grid architecture. Specifically, the designs of the key components of the system, including both power stage...
This paper proposes a combination use of e-beam inspection (EBI) for defect detection and CD Uniformity (CDU) measurement. The experiments are based on 14nm FinFET device manufactured on SOI substrate. A 5nm pixel size is utilized to perform hot spot inspection on SRAM pattern and N/P FET pattern after gate etching, spacer formation, and SiGe epitaxy process respectively. CDU measurement results match...
A single-transistor active pixel image sensor compatible with dual-poly-gate technology is investigated in this paper. The integration compatibility is studied by integrating this device using EEPROM fabrication processes. The operation mechanism, light sensing performance, and non-destructive reading of this image sensor will be discussed.
Obstacle avoidance is one of the most challenging problems for the topic of UAV indoor navigation. In this paper, an indoor obstacle avoidance strategy based on Scanning Laser Range Finder (SLRF) is developed, so that high-level flight commands and flight paths can be generated for an unmanned coaxial rotorcraft in real time. The developed strategy comprises three flight modes including hovering turn,...
This paper presents a 30V half-bridge 3D semiconductor power module (SPM) in a DFN3×3 package for DC-DC buck converter applications. The 3D Half-Bridge (HB) SPM is compared with a 2D side-by-side HB SPM through a synchronous buck converter at the test conditions of input voltage Vin=19V, output voltage Vo=1.8V, output current Io=12A, and a switching frequency of 300kHz. Both of the HB SPMs are based...
In the smart grid environment, appropriate power energy exchange strategies will be necessary for energy intensive industries (EIIs) with industrial power plants. This paper presents a systematic approach that can cope with the integration of industry consumers and an energy exchange strategy aiming at achieving balance between power production and consumption in EIIs. A basic balance model using...
This paper presents the design and hardware implementation and testing of 20kVA Gen-1 silicon based solid state transformer (SST), the high input voltage and high voltage isolation requirement are two major concerns for the SST design. So a 6.5kV 25A dual IGBT module has been customized packaged specially for this high voltage low current application, and an optically coupled high voltage sensor and...
Because of the special p-i-n structure of the tunneling FET (TFET), many different composite transistors can be formed with careful device design by combining TFET with MOSFET. In this paper, we propose the special applications of TFET as memory devices. A novel capacitor-less DRAM cell based on floating junction gate (FJG) concept can be configured with TFET. In addition, several different memory...
A Emergency Communication System based on Wireless Mesh Network (ECS-WMN) is proposed, which is easy to deploy and report the incidents and information such as personnel positions to the field rescue center and related members of rescue groups using different approaches, such as pop-ups on a computer or PDA screen, WiFi video terminals, WiFi cell phones and so on. A ECS-WMN consists of a WMN gateway,...
A novel DRAM cell based on floating gate (FG) concept is investigated. Compared to the conventional two-transistor FG DRAM cells, this new memory cell has a much simpler configuration with only one transistor. Besides, its write speed is improved by introducing an integrated gated diode and state ldquo1rdquo can be self-refreshable. In this paper, the device configuration, the DRAM application feasibility,...
Set the date range to filter the displayed results. You can set a starting date, ending date or both. You can enter the dates manually or choose them from the calendar.