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Time Dependent Dielectric Breakdown (TDDB) in p-FETs with HfSiON/SiO2 gate stacks under negative bias stress has been studied. It is shown that the shape parameter of Weibull distribution of Tbd, β, is very small value independent of gate electrode materials. This small β seems to arise from the interface layer (I.L.) breakdown. Further experimental result reveals the existence of additional interface...
We investigated bias temperature instability (BTI) and time dependent dielectric breakdown (TDDB) in TaCx/HfSiON MOSFETs in terms of the effects of TaCx metal gate electrode, using various Ta composition and TaCx thickness. We find a dual nature of TaCx metal gate electrode effects on the reliability. The gate electrode has both positive and negative influence on BTI and TDDB. Though various TaCx...
The slope parameter of Weibull plot of Tbd, beta, strongly depends on gate electrode material for metalgate/HfSiON gate stacks in n-FETs. Furthermore beta of Tbd under bipolar stress is larger than that under DC stress. From these results, it is found that the balance of injected carriers is strongly related to beta in terms of the origin of large beta for metal-gate/high-k.
In this paper, we investigate the correlation between traps and the degradation of reliability in HfSiON/SiO2 stacks with F incorporation. It was found that the nature of generated traps corresponds to that of pre-existing traps. Namely new traps cannot be generated if there is no seeds traps which can be eliminate by F incorporation. The controlling pre-existing electron traps which work as seeds...
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