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This work presents the design of an inductorless, monolithically integrated differential CMOS wideband amplifier covering the frequency range from 0.2 to 10.2 GHz, thus being a suitable candidate for full-band Ultra-Wideband transmitter applications. The amplifier is processed in a 1.2 V 65nm CMOS technology and is comprised of two pseudo differential current-reuse shunt-feedback stages combined with...
This article presents the design of a fully integrated inductorless LNA for wireless applications including WLAN, Bluetooth and UWB. The circuit was fabricated in 65 nm CMOS technology and operates at a supply voltage of 1.2 V. The two-stage design is comprised of a current reuse shunt feedback input stage followed by a differential pair, incorporating an active inductor load to compensate the gain...
This work presents the design, implementation and measurement results of a novel, gyrator-based active inductor circuit in a 1.2 V 65 nm CMOS technology. By solely employing stacked nMOS-pMOS transistor combinations, the proposed differential gyrator achieves a maximal self-resonance frequency of approximately 18 GHz and features high linearity with a current consumption of only 6 mA, therefore representing...
This paper presents the design and implementation of a low-voltage down-conversion mixer in 65 nm CMOS technology for UWB applications. The folded circuit topology with AC-coupled inverter based RF transconductance stage operates under low voltage conditions of 1.2 V with a peak gain of 14.5 dB and a 3-dB-bandwidth from 1 GHz to 10.5 GHz with 1 dBm LO power. The input referred compression point is...
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