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Modeling the 3-D capacitances of FinFET devices, shown in Figure 1 [1], accurately is critical for the continuing scaling of CMOS nodes. Without accurate capacitance and process variation modeling, the yield of advanced nanometer CMOS nodes will decease due to high timing mismatch. In this paper, we propose a new process variation based characterization to enable R&D engineers to identify critical...
This paper describes PCB Layout for EMI (Electromagnetic Interference) design of grounding and connector relation, it will be reduced design cost and get a lower EMI emission and get passive ESD testing report, the theory is following EMI EN55022, EN55024 and EN60950 requirement to implement on testing result, it will be designed to high-frequency PCB for EMI concern. This provide also discuss an...
We study nanosized metal grains induced DC and timing fluctuations in 16 nm high-κ/metal gate (HKMG) MOSFET devices. A localized work function fluctuation (LWKF) on device's DC/AC and CMOS inverter's characteristics is advanced using an experimentally validated 3D device simulation which cannot be well modeled using an averaged WKF (AWKF) method. DC characteristics estimated by the LWKF method are...
To the existing problems in single chip machine teaching, a small project-based method is proposed in this paper. The commonly designed principles in small project teaching are introduced firstly. Then, the implementation process of small projects teaching is described in details, which is mainly including the project task determination, project implementation, and project evaluation. Finally, the...
The performance comparison of differential amplifier between 16-nm planar CMOS and FinFET with different AR are conducted. The results of this study show that the FinFET exhibits excellent DC characteristic than other structures. The differential amplifier with a higher gain was also obtained using FinFET. We are currently studying the effect of device variability on dynamic characteristics of differential...
In this work, we explore the effects of the number of fins and fin structure on the device DC, dynamic behaviors, and random-dopant-induced characteristic fluctuations of multifin field effect transistor (FET) circuits. Multifin FETs with different fin aspect ratios [AR ≡ fin height (Hfin)/fin width (Wfin)] and a fixed channel volume are simulated in a three-dimensional device simulation and the simulation...
In this work, we for the first time optimize dynamic characteristic of amorphous silicon thin-film transistor (TFT) gate (ASG) driver circuits for TFT-LCD panel. The rise time, fall time, power dissipation, and ripple voltage of the ASG driver circuit are optimized using simulation-based evolutionary method which integrates genetic algorithm and circuit simulation on the unified optimization framework...
This work for the first time estimates the influences of the intrinsic parameter fluctuations consisting of metal gate workfunction fluctuation (WKF), process variation effect (PVE) and random dopant fluctuation (RDF) on 16-nm-gate planar metal-oxide-semiconductor field effect transistors (MOSFETs) and circuits. The WKF and RDF dominate the threshold voltage fluctuation; however, the WKF brings less...
As the dimension of semiconductor device shrunk into nanoscale, characteristic fluctuation is more pronounced, and become crucial for circuit design. Diverse approaches have been reported to investigate and suppress the random-dopant-induced fluctuations in devices. However, attention is seldom drawn to the existence of high-frequency characteristic fluctuations of active device. In this paper, intrinsic...
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