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The thickness of wafers for manufacturing silicon solar cells is getting thinner in order to take advantage of the advancement of wafer fabrication process technology and price competitiveness. As the thickness of the wafer becomes thinner, the solar cell manufacturing process and technology for thinner wafer are needed. In this paper, we analyze the tendency of optical and electrical losses according...
In this paper, boron diffused layer optimization was described by metal impurity concentration control using gettering process. Boron diffusion was performed using BBr3 diffusion furnace with varying cooling rate and treated Rs with acid etching. The effect of gettering in the diffused layer was analyzed using SIMS and QSS-PC method, where by metal impurity and boron concentration and saturation current...
High quality rear surface passivation is a prerequisite to obtain high conversion efficiency on thin wafers. SiOxNy with low absorbance and variable refractive index inherits the properties of both SiNx and SiO2 which act as a rear surface reflector. SiOxNy layer with low refractive indices ranging from 1.51 to 1.61 was deposited and their chemical composition was analyzed by Fourier transform infrared...
A 1.2 TB/s ring interconnect implemented with a 9 metal 45 nm technology is described. The implementation provides on-die communication for 8 Xeon cores, 8-port parallel-access 24 MB L3 cache, and 2 system-interface ports. The efficient, flexible, and modular building-block approach used to construct our design is described.
Here we present the formation of PVDF-TrFE thin films epitaxially grown on molecularly ordered PTFE surface by spin coating and subsequent thermal annealing. Nearly single crystalline polymer films were obtained with a axis of PVDF-TrFE crystals aligned parallel to the PTFE surface normal, giving rise to the crystalline lamellae directionally oriented perpendicular to the chain axis of PTFE. Furthermore,...
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