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In this paper, a 1200 V, 100 A T-type full SiC power module is evaluated in a five-level T-type photovoltaic (PV) inverter. The T-type module is characterized with double pulse test, and based on the results, loss evaluation of the PV inverter is performed. The high power density of 27 W/in3 and 3 kW/kg, and the peak efficiency of 99.2% are achieved for the lab prototype. A de-sat based short-circuit...
This paper is focused on studying a 1200V SiC JFETs cascode device released recently. The gate drive circuit design and switching performance are compared with its counterpart, 1200 V SiC MOSFETs. The research finds out the gate drive circuit design of SiC JFETs cascode is similar to that of SiC MOSFETs. In addition, an optimized gate driver is designed to minimize the device switching loss without...
A de-sat based short-circuit protection scheme using commercial driver for SiC MOSFETs is presented and experimentally verified on 1200V 3-level T-type SiC MOSFET module in this paper. Response time is very critical for the short-circuit protection of SiC MOSFETs due to the limited short-circuit withstand time (SCWT). Soft turn-off is required to avoid high voltage spike during the turn-off of the...
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