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As two exemplary candidates of wide-bandgap devices, SiC MOSFETs and GaN HEMTs are regarded as successors of Si devices in medium-to-high-voltage (>1200V) and low-voltage (<650V) domains, respectively, thanks to their excellent switching performance and thermal capability. With 650V SiC MOSFETs coming into being the direct competition of SiC and GaN in <650V domains is inevitable, such as...
An indirect matrix converter is employed directly converting the grid ac to the battery voltage, with the dual-active-bridge taking care of the power factor correction and power delivery simultaneously. Such circuit is regarded as one candidate of the high-efficiency and high-power-density electric vehicle on-board chargers, if the double-frequency current ripple to the battery is tolerated. Instead...
This paper designed the gate driver circuits and optimized the PCB layout in a 7.2kW battery charger using paralleled GaN HEMTs. 650V/60A enhancement mode GaN HEMTs provided by GaN Systems Inc are adopted. To optimize the switching performance of paralleled GaN HEMTs with low loss and high reliability, effects of parasitic inductance and capacitance are modeled and analyzed. Through cancelling the...
Battery chargers of Plug-in Hybrid Electric Vehicles require high efficiency operation. An LLC resonant DC/DC converter is an excellent choice to reach the high efficiency with reduced current stress. In this paper, a CoolMOS based 10kW full-bridge LLC resonant DC/DC converter with >97% efficiency is designed. CoolMOS model is utilized to analyze the system loss. Experimental results validate that...
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