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Van der Waals (vdW) metal–semiconductor junctions (MSJs) exhibit huge potential to reduce the contact resistance and suppress the Fermi‐level pinning (FLP) for improving the device performance, but they are limited by optional (2D) metals with a wide range of work functions. Here a new class of vdW MSJs entirely composed of atomically thin MXenes is reported. Using high‐throughput first‐principles...
Few‐layer black phosphorus (FL‐BP) is a promising high‐mobility semiconductor with thickness‐dependent direct bandgap varying from visible to mid‐infrared region. The poor stability under harsh environment, stemming from irreversible oxidization of P atoms with lone pair electrons, restricts its practical applications. Herein, an electrochemical intercalation and in situ electrochemical deposition...
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