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In this paper, we propose a novel double-shielded interposer design with two metal layers directly contacting to the silicon substrate surfaces for high-speed signal propagating along through silicon vias (TSVs). To enhance the shielding effects, shallow highly doped silicon is made on both sides of the silicon interposer forming ohmic contact between the metallization layer and silicon. The metallization...
Through silicon vias (TSV) are critical vertical interconnects in 3D IC. We comparatively studied the signal integrity of different designs of TSVs both existing and new in a single die up to 20 GHz. For TSVs in multiple die stacking, we proposed to use the cascaded scattering matrix approach for their signal integrity analysis. The results are validated against those from full-path simulation. Compared...
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