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We present a state-of-the-art fabrication technology and physics-based model for molybdenum disulfide (MoS2) field effect transistors (FETs) to realize large-scale circuits. Uniform and large area chemical vapor deposition (CVD) growth of monolayer MoS2 was achieved by using perylene-3,4,9, 10-tetracarboxylic acid tetrapotassium salt (PTAS) seeding. Then, a gate first process results in enhancement...
This paper presents a model for graphene electrolyte-gated field-effect transistors (EGFETs) that incorporates the effects of the graphene-electrolyte interface and quantum capacitance of graphene. The model is validated using experimental data collected from fabricated graphene EGFETs and is employed to extract device parameters such as mobility, minimum carrier concentration, interface capacitance,...
Graphene, a one-atom-thick layer of carbon atoms arranged in a honeycomb lattice, has recently attracted great interest among physicists and engineers. The combination of the unique properties of this material, with new device concepts and nanotechnology may overcome some of the main limitations of traditional radio-frequency (RF) electronics in terms of maximum frequency, linearity and power dissipation...
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