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Effects of hydroxyl group (OH) in the gate insulator (GI) of AlOx formed by atomic layer deposition on the negative bias illumination stress (NBIS) stability of amorphous InGaZnO (a‐IGZO) thin film transistors (TFTs) by changing the deposition temperature (Tdep) of the AlOx GI are studied. There are no significant differences in the electrical properties and stabilities of each device, such as field...
A fully transparent non‐volatile memory thin‐film transistor (T‐MTFT) is demonstrated. The gate stack is composed of organic ferroelectric poly(vinylidene fluoride‐trifluoroethylene) [P(VDF‐TrFE)] and oxide semiconducting Al‐Zn‐Sn‐O (AZTO) layers, in which thin Al2O3 is introduced between two layers. All the fabrication processes are performed below 200 °C on the glass substrate. The transmittance...
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