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A BiCMOS structure called SST-BiCMOS is proposed. In this structure, a high-performance emitter-base self-aligned bipolar technology using double polysilicon layers called SST and a submicron-gate-length lightly doped-drain MOS technology are used. This structure was used to realize high-performance BiCMOS technology with a cutoff frequency of 20 GHz, an NPN transistor, a propagation delay time of...
A CBi-CMOS IC, with complementary high-performance bipolar and CMOS on the same wafer, is reported. The structure is based on a self-aligned high-speed bipolar process called super self-aligned process technology or SST. The fabrication process is described, and its feasibility is confirmed by evaluating some devices fabricated by this technology. With a single 5-V supply, a propagation time delay...
A practical bipolar logic circuit, a three-stage frequency divider, has been made with advanced super self-aligned process technology (a halfmicron bipolar technology), which has been operated at clock frequencies up to 5.5 GHz.
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