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This paper presented a novel method to realize millimeter wave integrated antenna and waveguide. The antenna has bandwidth great than 90 GHz and its measured gain is about 10.8 dB Pattern of the antenna has been measured and agree with the simulated results.
GaAs/InxGa1−xAs/GaAs/AlAs double barrier resonant tunneling diodes (RTDs) are designed as the stress gauge element for the gyroscope application, which is based on their meso-pizeoresistive effect. The RTD with double air-bridges is fabricated using molecular beam epitaxy (MBE) and GaAs surface micromaching technology. Raman spectroscopy is used for the stress measurements. Combining the stress measurement...
A silicon based THz substrate integrated waveguide (SIW) bandpass filter with a pair of antipodal linearly tapered slot Antennas (ALTSA) is designed and fabricated with MEMS process. A prototype with passband range 350GHz~370GHz is measured by using a quasi-optic measurement system. The measured data are in agreement with the simulated results, which show the filter has good selection performance...
In the paper, the design, simulation and fabrication of a quadruple-anchored MEMS switch for switched-line phase shifters are presented. Swept inner bends were developed to lower the actuate voltage and suppress the stress of the deformed switch. Physical dimension of the MEMS switch is limited to 400μm × 400μm. The 3μm-thick polyimide membrane is spun between the bias and coplanar waveguides as the...
Since the additives is necessary for eliminating the residual stress of the nickel structure in MEMS devices, the effect of additives on mechanical properties of electroplating nickel was studied in this paper. Two types of nickel specimens was electroplated in electrolytes with both saccharine and butynediol (type A), and only saccharine (type B), respectively. The test chips were then tested in...
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