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Through a comparative study of the scanning electron microscopy (SEM), atomic force microscopy (AFM) and X-ray diffraction (XRD) results, polarity is found to play an important role in the GaN wet etching process. For the pure screw dislocation it is easy to be etched along the steps that the dislocation terminates. Consequently a small Ga-polar plane is formed to prevent further vertical etching,...
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