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In this paper we develop the concept of implementing pattern recognition algorithms in analog memristor networks. First, a device model is presented with experimental results demonstrating the feasibility of using WOx-based memristors to represent the tunable weights in a neural network. Next, simulation results demonstrate that an array of these memristors can be used to implement an unsupervised...
A Wearable Mobile Electrocardiogram Monitoring System (WMEMS), which mainly consists of a wearable Electrocardiogram (ECG) acquisition device, a mobile phone with global positioning system, and a healthcare server, was developed in this study. Most of telemedicine systems for long-term ECG monitoring focus on the application of communication techniques. However, how to monitor long-term ECG state...
In recent years, through wafer electrical connections have become important roles, which will be used in developing high-speed, compact 3D microelectronic devices in next generation. Although the electroplating copper is a well-established process, completely void-free electroplating in through silicon holes (TSH) with a high aspect ratio remains a big challenge. Naturally, local current distribution...
Micro TiO2 and Al2O3·3H2O fillers were loaded into the epoxy resin by mixing different weight ratio. The flashover studies were conducted using 20 ns (rise time)/1.5 μm (half-height width time) pulse under 5 × 10-3Pa vacuum. The surface flashover properties of micro TiO2 and Al2O3·3H2O/epoxy composites were presented. In addition, their dielectric spectrum and thermally stimulated depolarization current...
Micro TiO2/epoxy composite samples with different filler weight percentage were prepared. Their flashover voltages under the 50ns (rise time)/2.5μm (half-height width time) pulse in transformer oil were measured. The results of surface flashover voltages as the number of flashovers, weight percentage of the filler, fluid pressure and the steepness of the pulse were presented. It is demonstrated that...
We report studies on nanoscale Si-based memristive devices for memory and neuromorphic applications. The devices are based on ion motion inside an insulating a-Si matrix. Digital devices show excellent performance metrics including scalability, speed, ON/OFF ratio, endurance and retention. High density non-volatile memory arrays based on a crossbar structure have been fabricated and tested. Devices...
A series of graphene-based nanomolecule devices are constructed by connecting the graphene nanodot to two Au electrodes through different bond length between the electrodes and molecules. The geometric structure and electronic properties are studied by using density functional theory calculations. Basing on the optimized structure, we calculate the quantum conductance of the system by using the Green's...
This review provides a survey of recent progresses in nanowire (NW) electronics. Studies at the single-transistor level have shown that devices based on chemically synthesized nanowires can offer similar or better performance compared to their CMOS counterparts. The ultra-thin body, one-dimensional NW structure further assures that electrical integrity can be preserved even in aggressively scaled...
The vacuum surface flashover characteristic of solid material under steep pulse severely restricts the structure and performance of pulsed-power devices; and with excellent performance in insulation and mechanical strength, epoxy resin has been widely employed in pulse equipment; moreover, the accumulation of surface charge not only enhances the electric field but also affects the movement of the...
We present recent studies on amorphous silicon (a-Si) based resistive switching nonvolatile memory devices. The devices exhibit excellent performance of high on/off resistance ratio, high yield, fast speed, long retention/endurance and are fully compatible with CMOS processing. High-density crossbar arrays were successfully demonstrated without degradation of the device performance as compared to...
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