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A capacitance calibration method is presented aiming at the precise calibration of the large values of capacitances. The system for calibrating the large capacitance standards under the four-terminal-pair (4TP) definition consists of a current-comparator-based capacitance bridge associated with an inductive voltage divider (IVD). Design of the system and its calibration procedure are described.
Air (dry nitrogen) and fused silica standard capacitors have been monitored at NMIJ since 1999. In this paper, we describe the monitoring results of these capacitors and evaluate their behavior.
This study presents the designs of a multi-frequency quadrature bridge that enables standard capacitors to be calibrated at a measurement frequency of 1.592 kHz based on the ac quantized Hall resistance (ac QHR).
An on-chip noise canceller with high voltage supply lines for the nanosecond-range power supply noise is proposed. The canceller fabricated with 90-nm CMOS achieves 68% noise reduction with 2.0% power increase. Under the same noise reduction conditions, the area penalty for the canceller is 1/77 and 1/45 of those for the additional on-chip decoupling capacitors and the power supply lines respectively.
A high-frequency transformer isolated soft-switching DC-DC converter for fuel-cell cogeneration systems with utility-interactive inverter is investigated. The new type DC-DC converter offers a high efficiency in a wide power range, from rated to low power, by means of a new soft-switching topology. A prototype of the DC-DC converter and utility-interactive inverter cascade system is practically evaluated...
To provide calibrations of standard capacitors of 0.01-1 muF, a four terminal-pair bridge has been developed. The combined standard uncertainty in the calibration of the 0.01 muF capacitor based on a quantized Hall resistance was estimated to be 0.54times10-6
Ruthenium silicide (Ru 2 Si 3 ) films were fabricated by an inter-layer reaction between ruthenium and silicon, and their oxidation resistance was investigated. These films remain conductive even after oxidation at 700 o C, which is more than 100 o C higher than that in the case of a TiN film. When a Ru/Ru 2 Si 3 /Si structure is heat-treated at 700...
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