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The processes of formation of nanostructured metals phases on the surface of graphites with different structure and surface morphology (thermoexfoliated graphite, dispersion graphite) are considered. Substrates of graphite carriers of different structural types differ in characteristics of the surface condition. The thermoexfoliated graphite has the most developed, porous and defective surface. Further...
We demonstrate a new type of infrared plasmonic antenna for long-wavelength nano-scale enhanced sensing. The plasmonic materials utilized are epitaxially-grown semiconductor engineered metals, which results in high-quality, low-loss infrared plasmonic metals with tunable optical properties.
We demonstrate a mid-infrared perfect absorber fabricated only from highly-doped semiconductors. A strong (>98%) absorption resonance is observed which is effectively independent of lateral geometry, but highly dependent on the vertical profile.
A study of the reverse-leakage-current mechanisms in metal-organic-chemical-vapor-deposition (MOCVD)-grown GaN Schottky-barrier diodes is presented. An analysis is carried out of the characteristics of GaN Schottky diodes as well as of diodes with an InGaN surface layer to suppress the reverse leakage current and increase the breakdown voltage. The experimental results of the diodes with InGaN surface...
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