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Organic and polymer-based resistive memory cell sandwiched between two vertically aligned electrodes constitute crossbar memory arrays in which the building blocks, referred to as bit cells, possess two or multiple stable resistance states.1 They are promising circuit elements due to their good scalability and processability, high possibility of molecular design through chemical synthesis, high storage...
Locating high-resistance grounding faults poses a tough and challenging problem for the safety of DC railway systems. High-resistance grounding fault current isn't sufficient to trigger switches, which may expand the accident or turn into potential hazards. In order to overcome the limits of the existing methods (such as signal injecting method, resistance method and so), developing a novel fault...
The frequency dependence of capacitance-voltage (C-V) characteristics of Hg/GaN and Hg/InGaN/GaN Schottky contacts are investigated for 1KHz, 10KHz and 1MHz at room temperature. An anomalous peak in the C-V curves of Hg/GaN sample is observed but no peak for the Hg/InGaN/GaN sample occurs. The interface states, series resistance and minority-carrier injection would be the origin of this anomalous...
For transistor research and development, one of the important figures of merit is the carrier mobility. The measurement of mobility is cumbersome in large devices, and nearly impossible in nano scale devices. Very often, effective mobility (μeff) is extracted from the I-V curve instead. There are many pitfalls in equating μeff to mobility (μ), including charge-trapping and series resistance effects...
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