Organic and polymer-based resistive memory cell sandwiched between two vertically aligned electrodes constitute crossbar memory arrays in which the building blocks, referred to as bit cells, possess two or multiple stable resistance states.1 They are promising circuit elements due to their good scalability and processability, high possibility of molecular design through chemical synthesis, high storage density, amenability to processing onto a variety of substrates, large-area and low-cost deposition techniques such as spin coating, roll-to-roll processing, ink jet printing, and electrochemical processing.2 Additionally, the polymer also presents other favorable properties working as special electronic devices, such as excellent mechanical strengths, lightweight and flexibility.3 In this paper, the resistive switching feature of the electromagnetic PPy composite films with magnetic metal cobalt nanoparticles (Co NPs) is investigated for the first time. The pure PPy film does not show any resistive switching phenomenon, while the Co-PPy composite films show obvious bipolar resistive switching with a typical filamentary feature. The role of the Co NPs for resistive switching in the Co-PPy composite films and the detailed mechanism are discussed.