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Low power and reliable “Fab-friendly” resistance switching memory devices (ReRAM) are achieved by controlling composition and morphology of simple binary transition-metal oxides (MeOx) and metal-nitride electrodes (Ti-N) through physical vapor deposition (PVD) methods. Adjusting PVD deposition parameters influence crystalline structure, surface morphology, and stoichiometry, which subsequently influence...
An adaptive-threshold-voltage differential pair and a low-voltage source follower using independent-double-gate-(IDG-) FinFETs are proposed for a low-voltage operational amplifier (op amp). These circuits were implemented by our FinFET technology that enables co-integration of connected-DG- (CDG-) and IDG-FinFETs. The proposed components enable a two-stage op amp to accept the input below the nominal...
This paper presents a method to salvage malfunctioned bits in a FinFET SRAM array caused by random threshold voltage (Vt) variation. The Vt of pass gates (PGs) is gradually lowered during the read process from the initial high value until the stored data is detected by the sense amplifier. As a result, the best Vt is automatically chosen for each cell and malfunctioned bits of both those too fast...
The first one-cc or one-cubic-centimeter computer (OCCC) that integrates a sensor, ultra-wideband impulse radio (UWB-IR) transmitter, computing engine, and battery is demonstrated. Cross-layer integration includes SPIKE control, which achieves a record low power communication of 3.4-nW/bps with reduced operating time. Miniaturization techniques, such as wafer-level chip-size packaging and flip-chip...
An ultra-small, high-data-rate, low-power 1-cc computer (OCCC) with an UWB-IR (ultra-wideband impulse-radio) transceiver was developed for a wireless sensor network. Thanks to bear-chip implementation and a flexible printed circuit board, the size of the computer is only 1 cm3. To achieve 10-Mbps data rate, a middle-class 32-bit microcontroller, which has both a bus interface and a USB 2.0 controller,...
A logic system consisting of four-terminal double-gate MOSFETs (4T-DGFETs) suppresses power consumption while it also improves processing efficiency by utilizing a flexible threshold-voltage control function by a second gate of 4T-DGFET. Based on the simulation calibrated with the fabricated device characteristics, it is shown that the 4T-DGFET logic is effective in low-standby-power applications...
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