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A Sn-doped Ga2O3 thin film was deposited on a n+-Si substrate by metal-organic chemical vapor deposition. The Ga2O3 film was found to be amorphous-like and exhibited n-type conduction with Sn doping. Room-temperature electroluminescence was clearly observed from the Sn:Ga2O3/n+ -Si diode, including an ultraviolet (UV) emission at ~ 370 nm, a yellow emission at ~ 580 nm, and a red emission at ~ 680...
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