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The transient switch-off of a bipolar 4H-SiC transistor from the deep-saturation mode is studied by performing 1D numerical simulation. Switch-off in the zero base current mode and in the mode of switching-off with a negative base current is examined. It is shown that at quite real values of the switching-off base current, the switch-off time can be made ~40 times shorter than the switch-off time...
The resistance of the BJT collector layer can be sharply reduced by the effective injection of minority carriers (holes) from base to collector. The conditions under which this process can occur are the short rise time and the high amplitude of the base pulse.
Main physical features of the collector resistance modulation processes have been studied via a one-dimensional simulation for n+–p–n0–n+ 4H–SiC bipolar junction transistor. The motion dynamics of minority carriers (holes) across the n0 collector layer during the switch-on process is traced. It is demonstrated that the effective modulation of the collector resistance is only possible in the case of...
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