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We present the experimental observation of type-II optical Weyl points and corresponding Fermi arcs in a three-dimensional photonic structure. We employ a system composed of an array of staggered helical waveguides fabricated using the direct laser writing technique. Weyl points are established by observing conical diffraction and Fermi arcs are demonstrated by showing surface confinement (and deconfinement)...
The Acquired Immune Deficiency Syndrome (AIDS) is caused by the Human Immunodeficiency Virus (HIV). A thorough understanding of the infection on a cellular level is important for the development of new classes of therapeutics or vaccines to combat this virus.
We report the demonstration of an ultra-compact 5-channel hybrid integrated III-V/Si transmitter. We successfully achieved modulation up to 40 Gbit/s/channel providing a total aggregated capacity of 200 Gbit/s and transmission over 10 km at 21.4 Gbit/s/channel for 100Gbit/s.
We reported the first hybrid Ill-V/Si integrated QPSK wavelength-tunable transmitter based on high-speed ring modulators (BW∼23GHz). 80 Gbit/s PDM-QPSK signal transmission over 100 km with said integrated hybrid transmitter as well as a fully packaged silicon-based coherent receiver is demonstrated.
We review recent advances on hybrid III-V/Silicon devices using edge coupling. Design of external silicon cavities enables the realization of a broad range of on-chip functionalities as well as advanced hybrid transmitters.
We demonstrate a compact low-chirp and energy-efficient integrated hybrid Ill-V/Si transmitter based on a Vernier tunable laser that covers the entire C-band, and a low drive voltage push-pull ring modulator that provides large extension ratio and low chirp.
We demonstrate a novel hybrid Ill-V/Si laser, which exhibits high fiber-coupled output power without booster SOA (up to +13 dBm at certain wavelengths) and a record tuning range (95nm) over the C and L band with side mode suppression ratio greater than 35 dB.
We propose a novel hybrid silicon-based laser with integrated variable reflectivity mirror. The single-ring laser is tunable over 10 nm with high SMSR. The adjustment of the mirror reflectivity allows controlling lasers characteristics.
We propose a bidirectional reflective semiconductor optical amplifier as promising solution for on-chip amplification with silicon photonic integrated circuit. Small form factor device, wide optical bandwidth and high optical fiber-to-fiber gain are presented.
We report on a fully integrated 16-channel polarization diversity fast slot-blocker with 100 GHz channel spacing using silicon photonics. We demonstrated extinction ratio of 20 dB and switching time of 10 ns timescale allowing add-drop operation as high as 320 Gbit/s PDM-32QAM signals.
This paper presents a novel corner-based force estimation method to monitor tire capacities required for the traction and stability control systems. This is entailed for more advanced vehicle stability systems in harsh maneuvers. A novel estimation structure is proposed in this paper for the longitudinal, lateral, and vertical tire forces robust to the road friction condition. A nonlinear and a Kalman...
In0.53Ga0.47As FinFETs are fabricated on 300 mm Si substrate. High device performance with good uniformity across the wafer are demonstrated (SS=78 mV/dec., Ion/Ioff∼105, DIBL=48 mV/V, gm=1510 µS/µm, and Ion=301 µA/µm at Vds=0.5V with Lg=120 nm device). The extrinsic field effect mobility of 1731 cm2/V-s with EOT∼0.9nm is extracted by split-CV. Devices fabricated on 300mm Si have shown similar performances...
InAs nanowires (NW) grown by MOCVD with diameter d as small as 10 nm and gate-all-around (GAA) MOSFETs with d = 12–15 nm are demonstrated. Ion = 314 µA/µm, and Ssat =68 mV/dec was achieved at Vdd = 0.5 V (Ioff = 0.1 µA/µm). Highest gm measured is 2693 µS/µm. Device performance is enabled by small diameter and optimized high-k/InAs gate stack process. Device performance tradeoffs between gm, Ron, and...
From the ATLAS Phase-I upgrade and onward, new or upgraded detectors and trigger systems will be interfaced to the data acquisition, detector control and timing (TTC) systems by the Front-End Link eXchange (FELIX). FELIX is the core of the new ATLAS Trigger/DAQ architecture. Functioning as a router between custom serial links and a commodity network, FELIX is implemented by server PCs with commodity...
Many applications use encryption to protect data confidentiality, which require decryption before any data processing. Integrating ASIC design of encryption engines and general-purpose processor can yield the best overall performance in program execution as it benefits from low latency hardware engine and high processor memory bandwidth. However, ASIC design is fixed once manufactured, which cannot...
This paper describes the development and analysis of a numerical alternative taxonomy of integrative technologies. Based on this research's purpose, four clusters are identified, as follows: communication and organization integration improvement, negative integration improvement, positive integration improvement, and manufacturing process standardization improvement. The taxonomy approach was the...
Vertical split-ring resonators (VSRRs) were fabricated which behave as magnetic metamolecules sensitive to both incident electric and magnetic fields with the stronger induced magnetic dipole moments upon excitation in comparison to planar SRRs. Using these metamolecules with different spacing in VSRR dimers, we investigate the hybridization of the magnetic plasmon modes associated with each constituent...
A novel 16-channel digitally wavelength-tunable laser is proposed and experimentally demonstrated using a semiconductor optical amplifier and silicon photonic integrated circuit. The device exhibits a laser threshold below 45 mA, SMSR around 20–25 dB and nanosecond switching time.
We demonstrate a novel fully integrated, silicon-on-insulator, 16-channel polarization diversity fast reflective slot-blocker with nanosecond switching time, integrating more than 65 functional elements. Its suitability for use in reconfigurable metropolitan networks is assessed.
In0.53Ga0.47As channel MOSFETs were fabricated on 300 mm Si substrate. The epitaxial In0.53Ga0.47As channel layer exhibits high Hall electron mobility comparable to those grown on lattice matched InP substrates. Excellent device characteristics (SS∼95 mV/dec., Ion/Ioff ∼105, DIBL ∼51 mV/V at Vds = 0.5V for Lg=150 nm device) with good uniformity across the wafer were demonstrated. The extracted high...
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