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Nanowires show unique promise for a multitude of optoelectronic devices, ranging from solar cells to terahertz (THz) photonic devices. Here, we discuss how THz spectroscopy is guiding the development of such nanowire-based devices. As an example, we focus on developing nanowire-based THz polarization modulators.
Photoconductive terahertz detectors based on single GaAs/AlGaAs core-shell nanowire have been designed and fabricated. The devices were characterised in a terahertz time-domain spectroscopy system, showing excellent sensitivity comparable to the standard bulk ion-implanted InP receiver, with a detection bandwidth of 0.1 ∼ 0.6 THz. Finite-difference time-domain simulations were performed to understand...
Optical pump-terahertz probe spectroscopy was used to study the key electronic properties of GaAs, InAs and InP nanowires at room temperature. Of all nanowires studied, InAs nanowires exhibited the highest mobilities of 6000 cm2V−1s−1. InP nanowires featured the longest photoconductivity lifetimes and an exceptionally low surface recombination velocity of 170 cm/s.
The photocarrier lifetime within semiconductor nanowires is a critical parameter for optoelectronic applications. Here, we present a technique to determine the lifetime with picosecond resolution, revealing a 7.5 ps lifetime for GaAs nanowires.
We have improved the stability and performance of terahertz (THz) photoconductive (Auston) switches using a combination of (NH4)2S surface passivation (SP) and silicon nitride (Si3N4) encapsulation. The influences of SP and encapsulation on the ultrafast electron dynamics in GaAs were examined using THz emission spectroscopy and optical pump-THz probe spectroscopy. The power of THz radiation from...
We present a terahertz radiation detector that measures both transverse components of a terahertz single cyclepsilas electric field, allowing the study of polarization dependent properties of materials. Measurements of birefringence in quartz are presented.
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