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In this work, we studied the proton and arsenic ion implantation-induced intermixing in InGaAsP/InGaAs and InAlGaAs/InGaAs quantum wells. The results were compared and discussed based on the defect formation and evolution process under the different implantation conditions and QW barrier materials.
We present the spectral behavior of two different quantum dots-in-a-well (dwell) infrared photodetectors grown by low-pressure metal-organic chemical vapor deposition (LP-MOCVD). In0.5Ga0.5As quantum dots (QDs) in an In0.15Ga0.85As/GaAs quantum well (QW) and In0.5Ga0.5As QDs in a GaAs/Al0.2Ga0.8As QW have been incorporated into photodetectors and characterized. A spectral response in the 3-5 mum atmospheric...
Enhancement of interdiffusion in GaAs/AlGaAs quantum wells (QWs) due to anodic oxides was studied. Photoluminescence and diffused QW modeling were used to understand the effects of intermixing on the QW structure. The activation energy is similar to those obtained from SiO/sub 2/ cap annealed quantum well structures.
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