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The short length on the electromigration lifetime is a useful effect to increase current limits in advanced circuits. A way to increase current limit is to consider the Blech effect. The electromigration threshold due to Blech effect in copper interconnect for 65 nm and 45 nm technology is reported in this study. The critical product (jL)c was determined by varying the metal length and stress current...
In this paper, the impact of ball bonding (BB) induced voltage transient on the reliability test including electro-migration (EM), time dependent dielectric breakdown (TDDB), negative bias temperature instability (NBTI) and electro-static discharge (ESD) are investigated. During the electronic flame-off (EFO) of ball bonding process, a spark discharge current, which applies a high electric field between...
A one-year electromigration experiment was performed on an 8.9 /spl mu/m wide serpentine metal structure, at stress current densities from 0.3 to 1.3 MA/cm/sup 2/. Resistance decreases were observed and explained, and used to estimate a drift velocity which is linearly proportional to the difference between the stress current and the current threshold. The activation energy was found to be approximately...
Data that demonstrate the usefulness of RR, the electrical resistance ratio between 298 K and 77 K, for monitoring the equality of Al-Si metal films are presented. A correlation between RR, electromigration median-time-to-fail (MTTF), and median-grain-radius (MGR) of the metal is shown, using examples of N/sub 2/ and H/sub 2/O contaminated films.<<ETX>>
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