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Hydrogen‐terminated diamond (H‐diamond) metal–oxide–semiconductor field‐effect transistors (MOSFETs) are fabricated, and a partial C–O channel is formed by UV‐ozone treatment of the H‐diamond surface to help realize normally off devices. The first parameterization of the vertical‐field (Feff)‐dependent effective hole mobility (μeff) in a normally off diamond FET is conducted using the fabricated...
By analysing the actual catenary arch of minor principal stresses under Rankine rupture surface, a new coefficient of lateral active earth pressure is proposed. And based on the limit equilibrium theory, new formulas of lateral active earth pressure on translating rigid retaining structures is derived, considering effects of soil arch and stress on rupture surface as well as surcharge stress. Further,...
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