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In this study, a plasma-based low-temperature, low-pressure SiN film deposition is investigated for device applications. Ammonia, nitrogen and silane are being used for optimization of the quality of SiN film for device passivation by ICPCVD. Characterization of SiN film is done using elastic recoil detection analysis, AFM, FTIR and ellipsometry. The effect of previous process parameters on subsequent...